|SPEAKER||CANCELLED - Lyudmila Goncharova, Department of Physics and Astronomy, University of Western Ontario|
High-resolution ion depth profiling: beyond high-K materials:
Engineering Physics Seminar Series
Light emission from Si and Ge quantum structures has been a focus of research due to the need to silicon-based light sources in opto-electronic and photonic applications. We employ advanced methods of nanomaterials growth, such as ion beam implantation and molecular beam epitaxy (MBE) to prepare light emitting Si/Ge quantum structures. We compare Si QDs prepared in silicon oxide and silicon nitride and discuss their potentials for application in light emitting devices. There is a relationship between the preparation method of Si and Ge quantum structures, and the structural, electronic, and optical properties in terms of strength of quantum confinement (QC). A relatively simple model of QC, using a ‘particle-in-a-box’-type perturbation to the effective mass theory, was applied to Si and Ge quantum wells, wires and dots across a variety of preparation methods.
Progressive reduction of dimensions and introduction of novel materials in sub-32 semiconductor technology nodes demands continuous improvement in high-resolution ion depth profiling (HRDP). One of the challenges here is that electron transport properties of these diverse materials are closely linked to the basic interactions at the interface. We will demonstrate novel application of HRDP methods, including Rutherford backscattering spectroscopy (RBS), medium energy ion scattering (MEIS), low energy ion scattering (LEIS), and nuclear reaction profiling (NRP) to high-k/metal gate, solar cell and photonic structures.
Biography: L. Goncharova’s research is in a the broader area of metal oxide/alternative channel thin film structures and semiconductor
quantum dots (QD) and their interfaces. Dr. Goncharova received her M.Sc. degree from Lomonosov Moscow State University (Moscow, Russia)
in 1996, and her Ph.D. degree in Chemistry in 2003 from Rutgers, the State University of New Jersey (NJ, USA) in 2003, specializing in surface
physics and thermal energy atomic scattering. In 2003-2007, she was a post-doctoral fellow and later a research associate at Rutgers University.
She joined the University of Western Ontario as an Assistant Professor of Physics in 2007, and became an Associate Professor in 2014. Since
2012, Dr. Goncharova is a director of the Western Tandetron Accelerator Facility, a unique facility for the analysis and modification of advanced
materials with ion-beams and nuclear techniques. She was a holder of NSERC University Faculty Award, and Early Research Award. The focus of
her research has been in exploring and optimizing semiconductor materials and nanostructures for enhanced electronics, optoelectronics, and
more recently in the broader area of materials and the role they play in shaping technology and impacting society.
|DATE||Tuesday, April 04, 2017|
For more information phone 905-529-7070 X24559 or Email the Department of Physics and Astronomy